issue 1 - may 2006 1 www.zetex.com ? zetex semiconductors plc 2006 ZXTN25100BFH 100v, sot23, medium power transistor summary bv cex > 170v bv ceo > 100v bv eco > 6v i c(cont) = 3a v ce(sat) < 80mv @ 1a r ce(sat) = 67m p d = 1.25w complementary part number zxtp25100bfh description advanced process capability and package design have been used to maximize the power handling and pe rformance of this small outline transistor. the compact size and ratings of this device make it ideally suited to applications where space is at a premium. features ? high power dissipation sot23 package low saturation voltage 170v forward blocking voltage applications lamp relay and solenoid drivers general switching in automotive and industrial applications motor drive and control ordering information device marking 021 device reel size (inches) tape width (mm) quantity per reel ZXTN25100BFHta 7 8 3,000 c e b c e b pinout - top view
ZXTN25100BFH issue 1 - may 2006 2 www.zetex.com ? zetex semiconductors plc 2006 absolute maximum ratings notes: (a) for a device surface mounted on 15mm x 15mm x 1.6mm fr 4 pcb with high coverage of single sided 1oz copper, in still air conditions. (b) mounted on 25mm x 25mm x 1.6mm fr4 pcb with a high coverage of single sided 2 oz copper in still air conditions. (c) mounted on 50mm x 50mm x 1.6mm fr4 pcb with a high coverage of single sided 2 oz copper in still air conditions. (d) as (c) above measured at t<5secs. parameter symbol limit unit collector-base voltage v cbo 170 v collector-emitter voltage (forward blocking) v cex 170 v collector-emitter voltage v ceo 100 v emitter-collector voltage (reverse blocking) v eco 6v emitter-base voltage v ebo 7v continuous collector current (b) i c 3a peak pulse current i cm 9a power dissipation at t amb =25c (a) p d 0.73 w linear derating factor 5.84 mw/c power dissipation at t amb =25c (b) p d 1.05 w linear derating factor 8.4 mw/c power dissipation at t amb =25c (c) p d 1.25 w linear derating factor 9.6 mw/c power dissipation at t amb =25c (d) p d 1.81 w linear derating factor 14.5 mw/c operating and storage temperature range t j , t stg - 55 to 150 c thermal resistance parameter symbol limit unit junction to ambient (a) r ja 171 c/w junction to ambient (b) r ja 119 c/w junction to ambient (c) r ja 100 c/w junction to ambient (d) r ja 69 c/w
ZXTN25100BFH issue 1 - may 2006 3 www.zetex.com ? zetex semiconductors plc 2006 characteristics
ZXTN25100BFH issue 1 - may 2006 4 www.zetex.com ? zetex semiconductors plc 2006 electrical characteristics (at tamb = 25c unless otherwise stated) parameter symbol min. typ. max. unit conditions collector-base breakdown voltage bv cbo 170 220 v i c = 100 a collector-emitter breakdown voltage (forward blocking) bv cex 170 210 i c = 100 a, r be < 1k or -1v < v be < 0.25v collector-emitter breakdown voltage (base open) bv ceo 100 120 v i c = 10ma (*) notes: (*) measured under pulsed conditions. pulse width 300 s; duty cycle 2%. emitter-collector breakdown voltage (reverse blocking) bv ecx 67 vi e = 100 a, r bc < 1k or 0.25v > v bc > -0.25v emitter-collector breakdown voltage (base open) bv eco 68.4 vi e = 100 a, emitter-base breakdown voltage bv ebo 78 vi e = 100 a collector cut- off current i cbo <1 50 20 na a v cb = 136v v cb = 136v, t amb = 100c collector emitter cut-off current i cex -100nav ce = 136v; r be < 1k or -1v < v be < 0.25v emitter cut-off current i ebo <1 50 na v eb = 5.6v collector-emitter saturation voltage v ce(sat) 40 55 mv i c = 0,5a, i b = 50ma (*) 100 135 mv i c = 0,5a, i b = 10ma (*) 70 80 mv i c = 1a, i b = 100ma (*) 200 250 mv i c = 3a, i b = 300ma (*) base-emitter saturation voltage v be(sat) 940 1050 mv i c = 3a, i b = 300ma (*) base-emitter turn-on voltage v be(on) 890 1000 mv i c = 3a, v ce = 2v (*) static forward current transfer ratio h fe 100 200 300 i c = 10ma, v ce = 2v (*) 50 85 i c = 1a, v ce = 2v (*) 20 i c = 3a, v ce = 2v (*) transition frequency f t 160 mhz i c = 100ma, v ce = 5v f = 100mhz output capacitance c obo 9.4 20 pf v cb = 10v, f = 1mhz (*) delay time t (d) 16 ns v cc = 10v. i c = 500ma, i b1 = i b2 = 50ma. rise time t (r) 55 ns storage time t (s) 677 ns fall time t (f) 95 ns
ZXTN25100BFH issue 1 - may 2006 5 www.zetex.com ? zetex semiconductors plc 2006 typical characteristics
ZXTN25100BFH issue 1 - may 2006 6 www.zetex.com ? zetex semiconductors plc 2006 for international sales offices visit www.zetex.com/offices zetex products are distributed worldwide. for details, see www.zetex.com/salesnetwork this publication is issued to provide outline information only whic h (unless agreed by the company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contact or be regarded as a representation relating to the products or services concerned. the company reserves the right to alter without notice the specif ication, design, price or conditions of supply of any product or service. europe zetex gmbh streitfeldstra?e 19 d-81673 mnchen germany telefon: (49) 89 45 49 49 0 fax: (49) 89 45 49 49 49 europe.sales@zetex.com americas zetex inc 700 veterans memorial highway hauppauge, ny 11788 usa telephone: (1) 631 360 2222 fax: (1) 631 360 8222 usa.sales@zetex.com asia pacific zetex (asia ltd) 3701-04 metroplaza tower 1 hing fong road, kwai fong hong kong telephone: (852) 26100 611 fax: (852) 24250 494 asia.sales@zetex.com corporate headquarters zetex semiconductors plc zetex technology park, chadderton oldham, ol9 9ll united kingdom telephone: (44) 161 622 4444 fax: (44) 161 622 4446 hq@zetex.com package outline - sot23 note: controlling dimensions are in millimeters. ap proximate dimensions are provided in inches dim. millimeters inches dim. millimeters inches min. max. min. max. min. max. max. max. a 2.67 3.05 0.105 0.120 h 0.33 0.51 0.013 0.020 b 1.20 1.40 0.047 0.055 k 0.01 0.10 0.0004 0.004 c - 1.10 - 0.043 l 2.10 2.50 0.083 0.0985 d 0.37 0.53 0.015 0.021 m 0.45 0.64 0.018 0.025 f 0.085 0.15 0.0034 0.0059 n 0.95 nom 0.0375 nom g 1.90 nom 0.075 nom - - - - - l n h g a c f b m k d 3 leads
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